Liquid Phase EpitaxyCrystal Growth
What is Liquid Phase Epitaxy?
Liquid Phase Epitaxy (LPE) is a refined crystal growth technique where semiconductor layers are deposited from a molten metal solution onto a crystalline substrate. This near-equilibrium process produces exceptionally pure crystals with low defect densities.
At MANULED, we've perfected this technique to manufacture high-performance AlGaAs infrared LED chips. Our controlled growth environment enables precise layer thickness and composition control at the atomic level.
850-940nm
Wavelength Range
<1%
Defect Density
±5nm
Layer Precision
Temperature Control
±0.1°C
The LPE Manufacturing Process
Our four-stage process transforms raw materials into high-performance infrared LED chips through precise crystal engineering.
Substrate Preparation
High-purity GaAs wafers are meticulously cleaned and prepared to serve as the crystalline foundation for epitaxial growth.
Melt Preparation
Precise amounts of aluminum, gallium, and arsenic are combined in a graphite boat and heated to create a saturated melt solution.
Epitaxial Growth
The substrate is brought into contact with the melt. As temperature slowly decreases, atomic layers crystallize onto the wafer surface.
Layer Control
Multiple layers with varying compositions are grown sequentially to create the precise p-n junction structure required for LED operation.
Understanding Epitaxial Growth
We utilize both homoepitaxy and heteroepitaxy techniques to create optimized semiconductor structures for maximum LED performance.
Homoepitaxy
Growing epitaxial layers of the same material as the substrate (e.g., GaAs on GaAs). This maintains perfect lattice matching and produces the highest quality crystals.
Heteroepitaxy
Growing layers of different materials (e.g., AlGaAs on GaAs). This enables bandgap engineering to create efficient light-emitting structures with enhanced carrier confinement.
Precision-Engineered Chip Structure
Each MANULED chip consists of multiple epitaxial layers grown with atomic precision. Our AlGaAs double heterostructure design maximizes carrier confinement and light extraction efficiency.
Where We Fit in the IR LED Value Chain
Mining
Gallium extracted as byproduct of aluminum & zinc ore
Refining
Purified to 99.9999% (6N grade) for semiconductors
GaAs Wafers
Crystal growth & slicing into epi-ready substrates
Epitaxy
LPE growth of AlGaAs semiconductor layers
Chip Processing
Metallization, dicing & testing
Packaging
Die bonding, wire bonding & encapsulation
Products
Wearables, medical devices, security cameras
Mining
Gallium extracted as byproduct of aluminum & zinc ore
Refining
Purified to 99.9999% (6N grade) for semiconductors
GaAs Wafers
Crystal growth & slicing into epi-ready substrates
Epitaxy
MANULEDLPE growth of AlGaAs semiconductor layers
Chip Processing
MANULEDMetallization, dicing & testing
Packaging
Die bonding, wire bonding & encapsulation
Products
Wearables, medical devices, security cameras
Experience the MANULED Difference
Request samples to evaluate our LPE-grown IR LED chips in your application, or contact our sales team to discuss custom specifications